A1.期刊論文

1. A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR
2. A 2-nm-thick Mn Oxide on a Nitrogen-Stuffed Porous Carbon-Doped Organosilica as a Barrier of Cu Films
3. Influence of trisodium citrate on the Cu electrodeposition by sequential underpotential deposition of Pb and surface-limited redox replacement of Cu
4. Electrical and Reliability Characteristics of Dielectric Stack with Low Dielectric Constant SiCOH and Capping SiCNH Films
5. Comparison of Various Low Dielectric Constant Materials
6. Growth of a Cu(Co) film by underpotential deposition of Co and controlling the time of the surface-limited redox replacement of Cu
7. Electrochemical Growth of Cu(Ru) films via underpotential deposition of Pb, surface-limited redox replacement of Cu, and underpotential deposition of Ru
8. Effect of Post-annealing on Reliability of Cu/Low-k Interconnects
9. Role of ethylenediamine additive in Cu growth on a Co/SiO2/Si substrate via electrochemical atomic layer deposition of Pb and its surface limited redox replacement
10. Comparison of O2 plasma treatment on porous low dielectric constant material at sidewall and bottom of trench structure
11. A new alternative self-assembled-monolayer activation process for electroless deposition of copper interconnects without a conventional barrier
12. Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/ Mn2O3-xN/Cu Integration
13. Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing
14. Comparison of Cu and Co Integration with Porous Low-k SiOCH Dielectrics
15. Tailoring Bandgap and Electrical Properties of Magnesium-Doped Aluminum Zinc Oxide Films Deposited by Reactive Sputtering Using Metallic Mg and Al–Zn Targets
16. synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloy for metallization of copper without a conventional metallic barrier
17. Synergy of mercaptosilane monolayer embedding and extremely dilute cobalt alloying for metallization of copper without a conventional metallic barrier
18. Self-strengthening of electroless-plated copper via dual segregation of extremely dilute (0.1%) manganese oxide inclusions
19. Mechanism of strengthening electroless plated copper films with extremely T dilute oxide dispersion alloying: The optimal MnO addition
20. Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment
21. Reliability enhancement of copper/porous SiOCH metallization systems using nitrogen stuffing and bias-filter sputter deposited Mn2O3 barrier
22. Electrical and Reliability Characteristics of Self- Forming Barrier for CuNd/SiOCH Films in Cu Interconnects
23. Barrier-Free Process for Fluorinated Silicon Glass Film in Cu Interconnects

A2.研討會